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PD - 94103
SMPS MOSFET
IRFU3709
HEXFET(R) Power MOSFET
Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits
l l l l
VDSS
30V
RDS(on) max
9.0m
ID
90A
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
I-Pak IRFU3709
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 20 90 57 360 120 48 0.96 -55 to + 150
Units
V V A W W mW/C C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---
Max.
1.04 110
Units
C/W
Notes through are on page 9
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1
02/20/01
IRFU3709
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.029 6.9 7.9 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 9.0 VGS = 10V, ID = 15A m 10.5 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VDS = 24V, VGS = 0V, TJ = 125C 200 VGS = 16V nA -200 VGS = -16V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 27 6.7 9.7 22 11 171 21 9.2 2672 1064 109 Max. Units Conditions --- S VDS = 15V, ID = 30A 41 ID = 15A --- nC VDS = 15V --- VGS = 4.5V --- VGS = 0V, VDS = 10V --- VDD = 15V --- ID = 30A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 16V --- = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
382 30
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 0.88 0.82 48 46 48 52 90 A 360 1.3 --- 72 69 72 78 V ns nC ns nC
VSD trr Qrr trr Qrr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 30A, VGS = 0V TJ = 125C, I S = 30A, VGS = 0V TJ = 25C, I F = 30A, VR=15V di/dt = 100A/s TJ = 125C, IF = 30A, VR=15V di/dt = 100A/s
2
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IRFU3709
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
1000
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
2.7V
2.7V
10
10
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 90A
I D , Drain-to-Source Current (A)
1.5
TJ = 150 C
100
1.0
0.5
10 2.0
V DS = 15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFU3709
4000
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
3000
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
6
ID = 30A
5
V DS= 24V V DS= 15V V DS= 6V
Ciss
4
2000
3
1000
Coss
2
1
0 1
Crss
10 100
0 0 5 10 15 20 25 30
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C
ID , Drain Current (A)
100
1000 10us
10
100
100us 1ms
TJ = 25 C
1
10
10ms
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
1 1
TC = 25 C TJ = 150 C Single Pulse
10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFU3709
100
LIMITED BY PACKAGE
VDS VGS
RD
80
D.U.T.
+
ID , Drain Current (A)
RG
-VDD
60
VGS
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x ZthJC + TC J 0.001 0.01 0.1
PDM t1 t2 1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFU3709
EAS , Single Pulse Avalanche Energy (mJ)
1200
15 V
1000
VDS
L
D R IV E R
TOP BOTTOM ID 13A 19A 30A
800
RG
20V
D .U .T
IA S tp 0.0 1
+ - VD D
A
600
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
400
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFU3709
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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7
IRFU3709
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 )
2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S OUR C E 4 - D R A IN
6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 9 .6 5 (.3 8 0 ) 8 .8 9 (.3 5 0 ) 2 3 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 )
N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U TL IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ).
3X
1 .1 4 (.0 45 ) 0 .7 6 (.0 30 )
3X
0 .8 9 ( .0 3 5 ) 0 .6 4 ( .0 2 5 ) M AMB
1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .58 (.0 2 3 ) 0 .46 (.0 1 8 )
2 .2 8 (.0 9 0 ) 2X
0 .2 5 (.0 1 0 )
I-Pak (TO-251AA) Part Marking Information
8
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IRFU3709
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Starting TJ = 25C, L = 0.85mH
RG = 25, IAS = 30A.
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/01
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9

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